F. Piazza, C. Boccaccio, S. Bruyère, Riccardo Cea, Bill Clark, N. Degors, Christopher N. Collins, A. Gandolfo, A. Gilardini, E. Gomiero, Pierre-Marie Mans, G. Mastracchio, D. Pacelli, N. Planes, J. Simon, M. Weybright, A. Maurelli
{"title":"65纳米嵌入式汽车应用的高性能闪存","authors":"F. Piazza, C. Boccaccio, S. Bruyère, Riccardo Cea, Bill Clark, N. Degors, Christopher N. Collins, A. Gandolfo, A. Gilardini, E. Gomiero, Pierre-Marie Mans, G. Mastracchio, D. Pacelli, N. Planes, J. Simon, M. Weybright, A. Maurelli","doi":"10.1109/IMW.2010.5488312","DOIUrl":null,"url":null,"abstract":"In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the Flash cell and the related HV MOS and the results obtained on a 4Mbit Flash array are very promising.","PeriodicalId":149628,"journal":{"name":"2010 IEEE International Memory Workshop","volume":"262 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"High performance Flash memory for 65 nm embedded automotive application\",\"authors\":\"F. Piazza, C. Boccaccio, S. Bruyère, Riccardo Cea, Bill Clark, N. Degors, Christopher N. Collins, A. Gandolfo, A. Gilardini, E. Gomiero, Pierre-Marie Mans, G. Mastracchio, D. Pacelli, N. Planes, J. Simon, M. Weybright, A. Maurelli\",\"doi\":\"10.1109/IMW.2010.5488312\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the Flash cell and the related HV MOS and the results obtained on a 4Mbit Flash array are very promising.\",\"PeriodicalId\":149628,\"journal\":{\"name\":\"2010 IEEE International Memory Workshop\",\"volume\":\"262 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Memory Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IMW.2010.5488312\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Memory Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2010.5488312","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High performance Flash memory for 65 nm embedded automotive application
In this paper the results obtained for a new process flow that integrates a high performance flash cell for automotive application with a state of the art 65nm CMOS have been presented. Despite the several specific process steps introduced for the first time on embedded technologies, the MOS performances have not been impacted by the integration of the Flash cell and the related HV MOS and the results obtained on a 4Mbit Flash array are very promising.