集成在SIW结构中的电容式传感器——概念验证

V. Buiculescu, A. Baracu, C. Buiculescu
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引用次数: 1

摘要

本文提出了一种电路技术,旨在将具有共面波导(CPW)或微带端口的基于数字间换能器(IDT)的传感器集成到衬底集成波导(SIW)结构中,作为传输型传感器。因此,两个电磁耦合的SIW部分被特别配置,使这种转换成为可能。为了验证所提出传感概念的有效性,在耦合SIW部分的CPW端口上组装了不同值且完全兼容表面贴装技术的电容器,以模拟各种IDT电容传感器。最大抑制频率的偏差从4.32 GHz到7.56 GHz,电容值从4.7 pF降至0 pF(即开放式CPW)。
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Capacitive Sensors Integrated in SIW Structures – A Proof of Concept
The paper presents a circuit technique aimed to integrate interdigital transducer (IDT) based sensors, provided with either coplanar waveguide (CPW) or microstrip ports, into substrate integrated waveguide (SIW) structures for operation as transmission-type sensors. Therefore, two electromagnetically coupled SIW sections are specifically configured to make possible this conversion. In order to demonstrate the validity of the proposed sensing concept, capacitors of different values, and fully compatible with surface-mounting technology, were assembled at the CPW port of the coupled SIW section to simulate various IDT capacitive sensors. Deviation of the maximum rejection frequency from 4.32 GHz to 7.56 GHz was obtained using capacitance values from 4.7 pF down to 0 pF (i.e. open ended CPW).
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