{"title":"量子阱子带间红外探测器","authors":"B. Levine","doi":"10.1364/qwoe.1989.wb1","DOIUrl":null,"url":null,"abstract":"Transport physics, device performance (high responsivity, high detectivity, high speed, broad bandwidth) and potential advantages (over HgCdTe) of 10 μm GaAs/AlxGa1−xAs superlattice infrared detectors will be discussed.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Quantum Well Intersubband Infrared Detectors\",\"authors\":\"B. Levine\",\"doi\":\"10.1364/qwoe.1989.wb1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Transport physics, device performance (high responsivity, high detectivity, high speed, broad bandwidth) and potential advantages (over HgCdTe) of 10 μm GaAs/AlxGa1−xAs superlattice infrared detectors will be discussed.\",\"PeriodicalId\":205579,\"journal\":{\"name\":\"Quantum Wells for Optics and Optoelectronics\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Quantum Wells for Optics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/qwoe.1989.wb1\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qwoe.1989.wb1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Transport physics, device performance (high responsivity, high detectivity, high speed, broad bandwidth) and potential advantages (over HgCdTe) of 10 μm GaAs/AlxGa1−xAs superlattice infrared detectors will be discussed.
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