C45nm CMOS工艺ESD电源钳中隔离式可控硅与嵌入式双隔离式可控硅功率器件的比较

2010 IEEE International Conference on Integrated Circuit Design and Technology Pub Date : 2010-06-02 DOI:10.1109/ICICDT.2010.5510292

P. Galy, J. Bourgeat, J. Jimenez, C. Entringer, A. Dray, B. Jacquier

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引用次数: 9

摘要

由于技术规模的缩小，先进CMOS技术的静电放电(ESD)保护是一个挑战。本文的主要目的是介绍和比较C45nm CMOS技术中使用隔离可控硅(SCR)和双隔离可控硅的单节距ESD保护的硅结果。对这两种带有动态触发电路的保护结构进行了比较。此外，1节距IO的电源垫夹通过100ns TLP合格。硅测试结果表明，对于64 BGA封装，ESD稳健性达到4kV HBM, 200V MM和500V CDM。IO电源垫也不受锁存和电源顺序的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparison between isolated SCR & embedded dual isolated SCR power devices for ESD power clamp in C45nm CMOS technology

The Electrostatic Discharge (ESD) protection for advanced CMOS technologies is a challenge due to the technology scaling down. The main purpose of this paper is to present and compare silicon results in C45nm CMOS technology of a single pitch ESD protection using isolated Silicon Controlled Rectifier (SCR) and dual isolated SCR. These two protection structures with dynamic trigger circuit will be compared. Also, the power pad clamps in 1 pitch IO are qualified through 100ns TLP. Silicon result show that ESD robustness reaches 4kV HBM, 200V MM and 500V CDM for a 64 BGA package. IO power pads are also immune to Latch Up and power sequence.

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2010 IEEE International Conference on Integrated Circuit Design and Technology

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