T. Jonsson, C. Svensson, L. Drugge, Ghayathri Suriyamoorthy
{"title":"高电流晶体管封装非常低的导通电阻","authors":"T. Jonsson, C. Svensson, L. Drugge, Ghayathri Suriyamoorthy","doi":"10.23919/empc53418.2021.9584976","DOIUrl":null,"url":null,"abstract":"A high current, low voltage, single sided MOSFET device has been designed and experimentally verified. The device is based on a die fabricated in standard CMOS and a special package based on PCB technique fabricated in a standard PCB process. The transistor, its special package and its mounting on a mother board are carefully analyzed through simulation. The experimental verification indicates an on-resistance less than 0.5mohm, corresponding to a specific on-resistance of 6.7mohm-mm2.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"High current transistor packaging for very low on-resistance\",\"authors\":\"T. Jonsson, C. Svensson, L. Drugge, Ghayathri Suriyamoorthy\",\"doi\":\"10.23919/empc53418.2021.9584976\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A high current, low voltage, single sided MOSFET device has been designed and experimentally verified. The device is based on a die fabricated in standard CMOS and a special package based on PCB technique fabricated in a standard PCB process. The transistor, its special package and its mounting on a mother board are carefully analyzed through simulation. The experimental verification indicates an on-resistance less than 0.5mohm, corresponding to a specific on-resistance of 6.7mohm-mm2.\",\"PeriodicalId\":348887,\"journal\":{\"name\":\"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)\",\"volume\":\"91 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/empc53418.2021.9584976\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/empc53418.2021.9584976","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High current transistor packaging for very low on-resistance
A high current, low voltage, single sided MOSFET device has been designed and experimentally verified. The device is based on a die fabricated in standard CMOS and a special package based on PCB technique fabricated in a standard PCB process. The transistor, its special package and its mounting on a mother board are carefully analyzed through simulation. The experimental verification indicates an on-resistance less than 0.5mohm, corresponding to a specific on-resistance of 6.7mohm-mm2.
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