D. Guy, D. D. Besgrove, L. Taylor, N. Apsley, S. J. Bass
{"title":"InGaAs-InP MQW电吸收调制器","authors":"D. Guy, D. D. Besgrove, L. Taylor, N. Apsley, S. J. Bass","doi":"10.1364/qwoe.1989.tue13","DOIUrl":null,"url":null,"abstract":"InGaAs-InP multiple quantum well (MQW) structures are of particular interest for electro-absorption modulator applications because they offer the prospect of small, fast, monolithic spatial light modulator arrays compatible with the low loss optical fibre waveband at wavelength ~1.55μm. However, the QW absorption coefficients found in the InGaAs-InP system1 are significantly lower than those in the more widely studied GaAs-AlGaAs system2. This limits the changes in absorption coefficient provided by the quantum-confined Stark effect (QCSE) in InGaAs-InP, and hence the modulation attainable in single-pass structures3,4. A careful study of the QCSE in InGaAs—InP is therefore necessary to ensure that the full potential of this technologically important system is realised.","PeriodicalId":205579,"journal":{"name":"Quantum Wells for Optics and Optoelectronics","volume":"55 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-10-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"InGaAs-InP MQW Electro-Absorption Modulators\",\"authors\":\"D. Guy, D. D. Besgrove, L. Taylor, N. Apsley, S. J. Bass\",\"doi\":\"10.1364/qwoe.1989.tue13\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"InGaAs-InP multiple quantum well (MQW) structures are of particular interest for electro-absorption modulator applications because they offer the prospect of small, fast, monolithic spatial light modulator arrays compatible with the low loss optical fibre waveband at wavelength ~1.55μm. However, the QW absorption coefficients found in the InGaAs-InP system1 are significantly lower than those in the more widely studied GaAs-AlGaAs system2. This limits the changes in absorption coefficient provided by the quantum-confined Stark effect (QCSE) in InGaAs-InP, and hence the modulation attainable in single-pass structures3,4. A careful study of the QCSE in InGaAs—InP is therefore necessary to ensure that the full potential of this technologically important system is realised.\",\"PeriodicalId\":205579,\"journal\":{\"name\":\"Quantum Wells for Optics and Optoelectronics\",\"volume\":\"55 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-10-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Quantum Wells for Optics and Optoelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/qwoe.1989.tue13\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Quantum Wells for Optics and Optoelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/qwoe.1989.tue13","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
InGaAs-InP multiple quantum well (MQW) structures are of particular interest for electro-absorption modulator applications because they offer the prospect of small, fast, monolithic spatial light modulator arrays compatible with the low loss optical fibre waveband at wavelength ~1.55μm. However, the QW absorption coefficients found in the InGaAs-InP system1 are significantly lower than those in the more widely studied GaAs-AlGaAs system2. This limits the changes in absorption coefficient provided by the quantum-confined Stark effect (QCSE) in InGaAs-InP, and hence the modulation attainable in single-pass structures3,4. A careful study of the QCSE in InGaAs—InP is therefore necessary to ensure that the full potential of this technologically important system is realised.
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