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引用次数: 55

摘要

在此之前,CMOS的小型化在生产和研究层面都得到了非常积极的加速,甚至在一次会议上报道了5nm栅长p沟道MOSFET的晶体管工作。然而,即使在45纳米技术节点上,将小几何尺寸的mosfet实现到大规模集成电路中也存在许多严重的问题,并且我们是否能够成功地将10纳米以下的CMOS lsi引入市场是值得怀疑的。本文从多个方面讨论了CMOS降尺度的限制及其可能的原因。
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Future of CMOS technology
Previously, CMOS downsizing has been accelerated very aggressively in both production and research level, and even transistor operation of a 5 nm gate length p-channel MOSFET was reported in a conference. However, many serious problems are expected for implementing small-geometry MOSFETs into large scale integrated circuits even for 45 nm technology node, and it is questionable whether we can successfully introduce sub-10 nm CMOS LSIs into market or not. In This work, limitation and its possible causes for the downscaling of CMOS are discussed from many aspects.
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