{"title":"CMOS技术的未来","authors":"H. Iwai","doi":"10.1109/SMTW.2004.1393699","DOIUrl":null,"url":null,"abstract":"Previously, CMOS downsizing has been accelerated very aggressively in both production and research level, and even transistor operation of a 5 nm gate length p-channel MOSFET was reported in a conference. However, many serious problems are expected for implementing small-geometry MOSFETs into large scale integrated circuits even for 45 nm technology node, and it is questionable whether we can successfully introduce sub-10 nm CMOS LSIs into market or not. In This work, limitation and its possible causes for the downscaling of CMOS are discussed from many aspects.","PeriodicalId":369092,"journal":{"name":"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"55","resultStr":"{\"title\":\"Future of CMOS technology\",\"authors\":\"H. Iwai\",\"doi\":\"10.1109/SMTW.2004.1393699\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Previously, CMOS downsizing has been accelerated very aggressively in both production and research level, and even transistor operation of a 5 nm gate length p-channel MOSFET was reported in a conference. However, many serious problems are expected for implementing small-geometry MOSFETs into large scale integrated circuits even for 45 nm technology node, and it is questionable whether we can successfully introduce sub-10 nm CMOS LSIs into market or not. In This work, limitation and its possible causes for the downscaling of CMOS are discussed from many aspects.\",\"PeriodicalId\":369092,\"journal\":{\"name\":\"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)\",\"volume\":\"45 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"55\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMTW.2004.1393699\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMTW.2004.1393699","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Previously, CMOS downsizing has been accelerated very aggressively in both production and research level, and even transistor operation of a 5 nm gate length p-channel MOSFET was reported in a conference. However, many serious problems are expected for implementing small-geometry MOSFETs into large scale integrated circuits even for 45 nm technology node, and it is questionable whether we can successfully introduce sub-10 nm CMOS LSIs into market or not. In This work, limitation and its possible causes for the downscaling of CMOS are discussed from many aspects.