{"title":"用于故障识别和分析的大面积半导体器件分层","authors":"P. Nowakowski, C. Bonifacio, M. Ray, P. Fischione","doi":"10.31399/asm.cp.istfa2021p0410","DOIUrl":null,"url":null,"abstract":"\n This paper presents a development in semiconductor device delayering by broad ion beam milling that offers a uniform delayering area on a millimeter scale. A milling area of this size is made possible by the user's ability to position ion beams individually to cover the desired area. This flexibility in ion beam positioning also enables more precise targeting of an area of interest.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Large Area Semiconductor Device Delayering for Failure Identification and Analyses\",\"authors\":\"P. Nowakowski, C. Bonifacio, M. Ray, P. Fischione\",\"doi\":\"10.31399/asm.cp.istfa2021p0410\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n This paper presents a development in semiconductor device delayering by broad ion beam milling that offers a uniform delayering area on a millimeter scale. A milling area of this size is made possible by the user's ability to position ion beams individually to cover the desired area. This flexibility in ion beam positioning also enables more precise targeting of an area of interest.\",\"PeriodicalId\":188323,\"journal\":{\"name\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2021p0410\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2021p0410","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Large Area Semiconductor Device Delayering for Failure Identification and Analyses
This paper presents a development in semiconductor device delayering by broad ion beam milling that offers a uniform delayering area on a millimeter scale. A milling area of this size is made possible by the user's ability to position ion beams individually to cover the desired area. This flexibility in ion beam positioning also enables more precise targeting of an area of interest.
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