{"title":"具有隔离埋式多晶硅后门的完全耗尽双栅极薄膜SOI p-MOSFET","authors":"J. Denton, G. Neudeck","doi":"10.1109/SOI.1995.526497","DOIUrl":null,"url":null,"abstract":"A p-channel Dual-Gated Thin-Film Silicon-on-insulator (DG-TFSOI) MOSFET has been fabricated with an isolated buried polysilicon backgate and is in a SOI island. This structure allows individual operation of each backgate of each device, rather than the present common backgate (substrate) structure. The ability to use a individual buried gate to dynamically shift the threshold voltage of each individual top MOSFET may have significant implications for low power circuits and offers a way to boost drive currents for faster switching. By using Epitaxial Lateral Overgrowth (ELO) the bottom thermal buried oxide can be specified to any thickness.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":"{\"title\":\"Fully depleted dual-gated thin-film SOI p-MOSFET with an isolated buried polysilicon backgate\",\"authors\":\"J. Denton, G. Neudeck\",\"doi\":\"10.1109/SOI.1995.526497\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A p-channel Dual-Gated Thin-Film Silicon-on-insulator (DG-TFSOI) MOSFET has been fabricated with an isolated buried polysilicon backgate and is in a SOI island. This structure allows individual operation of each backgate of each device, rather than the present common backgate (substrate) structure. The ability to use a individual buried gate to dynamically shift the threshold voltage of each individual top MOSFET may have significant implications for low power circuits and offers a way to boost drive currents for faster switching. By using Epitaxial Lateral Overgrowth (ELO) the bottom thermal buried oxide can be specified to any thickness.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526497\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526497","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fully depleted dual-gated thin-film SOI p-MOSFET with an isolated buried polysilicon backgate
A p-channel Dual-Gated Thin-Film Silicon-on-insulator (DG-TFSOI) MOSFET has been fabricated with an isolated buried polysilicon backgate and is in a SOI island. This structure allows individual operation of each backgate of each device, rather than the present common backgate (substrate) structure. The ability to use a individual buried gate to dynamically shift the threshold voltage of each individual top MOSFET may have significant implications for low power circuits and offers a way to boost drive currents for faster switching. By using Epitaxial Lateral Overgrowth (ELO) the bottom thermal buried oxide can be specified to any thickness.
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