用超低能离子注入法模拟PSG/BSG玻璃掺杂FinFET

2016 16th International Workshop on Junction Technology (IWJT) Pub Date : 2016-05-09 DOI:10.1109/IWJT.2016.7486675

Chuan He, Lin Chen, David-Wei Zhang, J. Hong, Guangyao Jin, J. Zhang, J. Boeker, Renjie Liu, Hao Jin, Yimin Lv, J. Chen

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引用次数: 0

摘要

提出了一种利用PSG/BSG玻璃模拟掺杂的FinFET掺杂方法，并介绍了一种简化的工艺流程。数值模拟和实验结果表明，通过选择合适的介电层并进行优化的后续退火工艺，该方法可以均匀掺杂三维FinFET结构。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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FinFET doping with PSG/BSG glass mimic doping by ultra low energy ion implantation

A FinFET doping method with PSG/BSG glass mimic doping was presented and a simplified process flow was introduced. Numerical simulation and experiment results of sheet resistance and SIMS profiles indicated a uniform doping of the 3D FinFET structure with the presented method, by using a proper dielectric layer and conducting an optimized subsequent annealing process.

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2016 16th International Workshop on Junction Technology (IWJT)

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