毫米波CMOS集成电路用于多千兆通信和雷达应用

J. Sato, K. Takinami, Kazuaki Takahashi
{"title":"毫米波CMOS集成电路用于多千兆通信和雷达应用","authors":"J. Sato, K. Takinami, Kazuaki Takahashi","doi":"10.1109/RFIT.2015.7377883","DOIUrl":null,"url":null,"abstract":"Millimeter wave band is suitable for high-speed communication and high-precision sensing applications by its broadband characteristics. The key factor for these applications is to realize wireless systems that can be practically integrated by using complementary metal-oxide semiconductor (CMOS) technology. In millimeter wave bands, precise circuit models and digital calibration techniques for correcting variations of CMOS analog circuits are required for commercialization. This paper describes 60 GHz and 79 GHz CMOS chipsets for multi-gigabit wireless communications and phased-array radar applications. Additionally it introduces 140 GHz CMOS integrated circuit design as future challenges toward Terahertz era.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"338 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Millimeter wave CMOS integrated circuit for multi-gigabit communication and radar applications\",\"authors\":\"J. Sato, K. Takinami, Kazuaki Takahashi\",\"doi\":\"10.1109/RFIT.2015.7377883\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Millimeter wave band is suitable for high-speed communication and high-precision sensing applications by its broadband characteristics. The key factor for these applications is to realize wireless systems that can be practically integrated by using complementary metal-oxide semiconductor (CMOS) technology. In millimeter wave bands, precise circuit models and digital calibration techniques for correcting variations of CMOS analog circuits are required for commercialization. This paper describes 60 GHz and 79 GHz CMOS chipsets for multi-gigabit wireless communications and phased-array radar applications. Additionally it introduces 140 GHz CMOS integrated circuit design as future challenges toward Terahertz era.\",\"PeriodicalId\":422369,\"journal\":{\"name\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"338 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2015.7377883\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2015.7377883","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

摘要

毫米波波段以其宽带特性,适合高速通信和高精度传感应用。这些应用的关键因素是通过使用互补金属氧化物半导体(CMOS)技术实现可实际集成的无线系统。在毫米波波段,需要精确的电路模型和数字校准技术来校正CMOS模拟电路的变化,以实现商业化。本文介绍了用于多千兆无线通信和相控阵雷达应用的60 GHz和79 GHz CMOS芯片组。此外,介绍了140 GHz CMOS集成电路设计,作为太赫兹时代的未来挑战。
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Millimeter wave CMOS integrated circuit for multi-gigabit communication and radar applications
Millimeter wave band is suitable for high-speed communication and high-precision sensing applications by its broadband characteristics. The key factor for these applications is to realize wireless systems that can be practically integrated by using complementary metal-oxide semiconductor (CMOS) technology. In millimeter wave bands, precise circuit models and digital calibration techniques for correcting variations of CMOS analog circuits are required for commercialization. This paper describes 60 GHz and 79 GHz CMOS chipsets for multi-gigabit wireless communications and phased-array radar applications. Additionally it introduces 140 GHz CMOS integrated circuit design as future challenges toward Terahertz era.
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