松弛和应变SiGe PMOS器件反转层空穴迁移率的研究

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874629

K.-T. Chen, S. T. Chang

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引用次数: 0

摘要

研究了应变SiGe PMOS器件的空穴迁移性能。然后，计算用于考虑器件结构(包括BULK、SOI和DG)、SiGe材料、合金散射和(001)、(110)和(111)Si衬底取向对空穴迁移性能的影响，以表明这种潜在的PMOS器件的潜在性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A study of hole mobility in the inversion layer of relaxed and strained SiGe PMOS devices

The hole mobility performance in strained SiGe PMOS devices is studied. Calculations have then been used for considering the impact of device structures including BULK, SOI, and DG, SiGe materials, alloy scattering and biaxial compressive strain owing to (001), (110), and (111) Si substrate orientation on the hole mobility performance to give an indication of the potential performance of this potential PMOS device.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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