1mb磁阻随机存取存储器(MRAM)的单事件闭锁(SEL)和总电离剂量(TID)

2010 IEEE Radiation Effects Data Workshop Pub Date : 2010-07-20 DOI:10.1109/REDW.2010.5619499

J. Heidecker, G. Allen, D. Sheldon

{"title":"1mb磁阻随机存取存储器(MRAM)的单事件闭锁(SEL)和总电离剂量(TID)","authors":"J. Heidecker, G. Allen, D. Sheldon","doi":"10.1109/REDW.2010.5619499","DOIUrl":null,"url":null,"abstract":"A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).","PeriodicalId":278033,"journal":{"name":"2010 IEEE Radiation Effects Data Workshop","volume":"40 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)\",\"authors\":\"J. Heidecker, G. Allen, D. Sheldon\",\"doi\":\"10.1109/REDW.2010.5619499\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).\",\"PeriodicalId\":278033,\"journal\":{\"name\":\"2010 IEEE Radiation Effects Data Workshop\",\"volume\":\"40 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-07-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE Radiation Effects Data Workshop\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/REDW.2010.5619499\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radiation Effects Data Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/REDW.2010.5619499","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 25

摘要

1 Mbit MRAM是一种使用磁隧道结(MJT)存储元件的非易失性存储器，具有总电离剂量(TID)和单事件闭锁(SEL)的特性。我们的结果表明，这些器件在有效LET为84 MeV-cm2/mg(我们的测试结束)之前没有出现单事件锁存，并且在TID为75 krad (Si)之前没有出现钻头故障。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total ionizing dose (TID) and single event latchup (SEL). Our results indicate that these devices show no single event latchup up to an effective LET of 84 MeV-cm2/mg (where our testing ended) and no bit failures to a TID of 75 krad (Si).

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2010 IEEE Radiation Effects Data Workshop

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