21.2一个3nW的信号采集IC,集成了一个带有2.1 NEF的放大器和一个1.5fJ/反阶ADC

P. Harpe, Hao Gao, R. V. Dommele, E. Cantatore, A. Roermund
{"title":"21.2一个3nW的信号采集IC,集成了一个带有2.1 NEF的放大器和一个1.5fJ/反阶ADC","authors":"P. Harpe, Hao Gao, R. V. Dommele, E. Cantatore, A. Roermund","doi":"10.1109/ISSCC.2015.7063086","DOIUrl":null,"url":null,"abstract":"Signal acquisition systems for emerging applications, such as impiantatile or unobtrusively wearable autonomous sensors, large sensor arrays, or wireless self-powered sensors, require a minuscule form factor and very low power consumption. For example, the power available from a state-of-the-art 1mm3 solid-state thin-film battery is limited to 4nWfora 10yr lifetime [1], and a 1mm3 energy harvester attached to a running person delivers only 7.4nW [2]. While several low-power signal acquisition systems have been proposed [3-5], their consumption is still in the 20-to-1000nW range. Circuits aiming at low absolute power often result in low power-efficiency (due to overhead), high PVT sensitivity and poor reliability (due to the use of simplistic circuitry). This work presents a fully-integrated signal acquisition IC with six-fold lower power consumption than prior art, which provides state-of-the-art power-efficiency and ensures enough circuit reliability, precision and bandwidth to enable practical applications.","PeriodicalId":188403,"journal":{"name":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","volume":"34 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"64","resultStr":"{\"title\":\"21.2 A 3nW signal-acquisition IC integrating an amplifier with 2.1 NEF and a 1.5fJ/conv-step ADC\",\"authors\":\"P. Harpe, Hao Gao, R. V. Dommele, E. Cantatore, A. Roermund\",\"doi\":\"10.1109/ISSCC.2015.7063086\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Signal acquisition systems for emerging applications, such as impiantatile or unobtrusively wearable autonomous sensors, large sensor arrays, or wireless self-powered sensors, require a minuscule form factor and very low power consumption. For example, the power available from a state-of-the-art 1mm3 solid-state thin-film battery is limited to 4nWfora 10yr lifetime [1], and a 1mm3 energy harvester attached to a running person delivers only 7.4nW [2]. While several low-power signal acquisition systems have been proposed [3-5], their consumption is still in the 20-to-1000nW range. Circuits aiming at low absolute power often result in low power-efficiency (due to overhead), high PVT sensitivity and poor reliability (due to the use of simplistic circuitry). This work presents a fully-integrated signal acquisition IC with six-fold lower power consumption than prior art, which provides state-of-the-art power-efficiency and ensures enough circuit reliability, precision and bandwidth to enable practical applications.\",\"PeriodicalId\":188403,\"journal\":{\"name\":\"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers\",\"volume\":\"34 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-03-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"64\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2015.7063086\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Solid-State Circuits Conference - (ISSCC) Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2015.7063086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 64

摘要

用于新兴应用的信号采集系统,如穿刺式或不显眼的可穿戴式自主传感器、大型传感器阵列或无线自供电传感器,需要极小的外形尺寸和极低的功耗。例如,最先进的1mm3固态薄膜电池在10年的使用寿命中可提供的功率限制为4nw[1],而附着在跑步者身上的1mm3能量收集器仅提供7.4nW[2]。虽然已经提出了几种低功耗信号采集系统[3-5],但它们的功耗仍然在20- 1000nw范围内。以低绝对功率为目标的电路通常会导致低功率效率(由于开销),高PVT灵敏度和差可靠性(由于使用简单的电路)。这项工作提出了一个完全集成的信号采集IC,功耗比现有技术低六倍,提供了最先进的功率效率,并确保了足够的电路可靠性,精度和带宽,以实现实际应用。
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21.2 A 3nW signal-acquisition IC integrating an amplifier with 2.1 NEF and a 1.5fJ/conv-step ADC
Signal acquisition systems for emerging applications, such as impiantatile or unobtrusively wearable autonomous sensors, large sensor arrays, or wireless self-powered sensors, require a minuscule form factor and very low power consumption. For example, the power available from a state-of-the-art 1mm3 solid-state thin-film battery is limited to 4nWfora 10yr lifetime [1], and a 1mm3 energy harvester attached to a running person delivers only 7.4nW [2]. While several low-power signal acquisition systems have been proposed [3-5], their consumption is still in the 20-to-1000nW range. Circuits aiming at low absolute power often result in low power-efficiency (due to overhead), high PVT sensitivity and poor reliability (due to the use of simplistic circuitry). This work presents a fully-integrated signal acquisition IC with six-fold lower power consumption than prior art, which provides state-of-the-art power-efficiency and ensures enough circuit reliability, precision and bandwidth to enable practical applications.
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