高温氧化法改善SIMOX的电性能

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526516

B. Mrstik, P. McMarr, H. Hughes, M. Anc, W. Krull

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引用次数: 1

摘要

为了使SIMOX工艺成为一项可行的技术，它必须能够产生具有高击穿场和低密度缺陷的埋藏氧化物(BOX)层，从而缩短与衬底的表面Si层。在本文中，我们讨论了一个低成本的技术，以显着改善电性能的盒子。该工艺与形成具有极低位错密度的表面Si层相兼容。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Improvement in electrical properties of SIMOX by high-temperature oxidation

For the SIMOX process to become a viable technology, it must be capable of producing a buried oxide (BOX) layer with a high breakdown field and a low density of defects which short the superficial Si layer with the substrate. In this paper we discuss a low cost technique for significantly improving the electrical properties of the BOX. The process is compatible with the formation of a superficial Si layer with a very low density of dislocations.

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1995 IEEE International SOI Conference Proceedings

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