低功耗0.5 /spl mu/m SOI-CMOS技术的辐射特性

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526455

T.O. Vu, A. Nguyen, J. Cable

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摘要

SOI技术，如bond和SIMOX，是在要求辐射硬度高达1 Mrad及以上的环境中取代SOS的理想选择。我们已经开发了一种0.5 /spl mu/m的SOI-CMOS工艺，该工艺的硬度至少为300Krad(SiO2)。介绍了工艺和器件的特点，以及辐射结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Radiation characterization of a low power 0.5 /spl mu/m SOI-CMOS technology

SOI technologies such as bonded and SIMOX are good candidates to replace SOS in environments requiring radiation hardness up to and above 1 Mrad. We have developed a 0.5 /spl mu/m SOI-CMOS process that is rad-hard to at least 300Krad(SiO2). The process and device characteristics, along with radiation results, are presented.

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1995 IEEE International SOI Conference Proceedings

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