Performance trade-offs of argon implanted SOI MOSFETs with In and Sb retrograde channel doping

We report high performance device characteristics of 0.18 /spl mu/m SOI CMOS technology with indium (In) and antimony (Sb) retrograde channel doping and argon (Ar) implant. Experimental results demonstrate significant suppression of floating body (FB) effects, reduced off-state current, improved I/sub on/-I/sub off/ characteristics, and reduced drain induced barrier lowering (DIBL) values for the Ar implanted SOI devices. At the same time, the presence of Ar leads to increased subthreshold swing (SS), degraded GIDL characteristics, and increased electrical gate oxide thickness. Experimental results also show that the Ar implant for suppression of FB effects in PD SOI NMOS devices is less significant as the device gate channel length reduces to 0.15 /spl mu/m and below.