神经形态系统基于reram的模拟突触及IMT神经元装置

2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) Pub Date : 2016-04-25 DOI:10.1109/VLSI-TSA.2016.7480499

Kibong Moon, E. Cha, Daeseok Lee, Junwoo Jang, Jaesung Park, H. Hwang

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引用次数: 13

摘要

我们报道了基于纳米级氧化物的模拟突触酶装置和用于神经形态系统的绝缘体-金属-过渡(IMT)振荡器神经元装置[1,2]。通过控制金属/Pr0.7Ca0.3MnO3 (PCMO)界面上的氧化还原反应，可以在相同脉冲条件下控制突触的开关均匀性、扰动、保留和多级数据存储等特性。在各种金属电极中，我们发现Mo电极具有最好的数据保留特性。利用NbO2薄膜的IMT特性，研制了神经元用IMT振荡器。实验证实了使用Mo/PCMO突触阵列和NbO2振荡神经元实现高精度的模式识别。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ReRAM-based analog synapse and IMT neuron device for neuromorphic system

We report nanoscale oxide based analog synpase device and Insulator-Metal-Transition (IMT) oscillator neuron device for neuromorphic system [1,2]. By controlling the redox reaction at Metal/Pr0.7Ca0.3MnO3 (PCMO) interface, we can control synapse characteristics such as switching uniformity, disturbance, retention and multi-level data storage under identical pulse condition. Among various metal electrodes, we found that Mo electrode shows the best data retention characteristics. Using IMT characteristics of NbO2 film, we developed IMT oscillator for neuron application. We have experimentally confirmed the realization of pattern recognition with high accuracy using the Mo/PCMO synapse array and NbO2 oscillator neuron.

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2016 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA)

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