全聚合物薄膜晶体管的器件仿真

30th European Solid-State Device Research Conference Pub Date : 2000-09-11 DOI:10.1109/ESSDERC.2000.194781

C. Detcheverry, M. Matters

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引用次数: 7

摘要

本文提出了通道长度在5 ~ 20 μm范围内的全聚合物薄膜晶体管器件特性的解析模型。该模型包含有限数量的参数，可以很容易地在电路模拟器中实现。特别地，模型中迁移率的描述包括实验观察到的迁移率对栅极的依赖

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Device simulation of all-polymer thin-film transistors

This paper presents an analytical model which describes the device characteristics of all-polymer thin-film transistors with channel lengths in the range of 5 to 20 μm. The model contains a limited number of parameters and can be easily implemented in a circuit simulator. In particular, the description of the mobility in the model includes the experimentally observed dependence of the mobility on the gate

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30th European Solid-State Device Research Conference

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