应变硅纳米线隧道场效应管和逆变器

2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S) Pub Date : 2013-10-01 DOI:10.1109/E3S.2013.6705867

Q. Zhao, L. Knoll, S. Richter, M. Schmidt, S. Blaeser, G. V. Luong, S. Wirths, A. Nichau, A. Schafer, S. Trellenkamp, J. Hartmann, K. Bourdelle, D. Buca, S. Mantl

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摘要

陡坡器件，如隧道场效应管(tfet)，在300K时提供小的亚阈值斜率(SS) < 60mV/dec和低关断，从而实现低动态和静态功耗。模拟结果表明，在相同待机功率和开关能量下，tfet在VDD ~ 0.3 V时的性能比mosfet高(x8)[1]。

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Strained Si nanowire tunnel FETs and inverters

Steep slope devices, like Tunnel FETs (TFETs), provide small subthreshold slope (SS) <;60mV/dec at 300K and low Ioff, enabling low consumptions of both dynamic and static power. Simulations of TFETs show higher (x8) performance at VDD ~ 0.3 V than MOSFETs at the same standby power and switching energy [1].

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2013 Third Berkeley Symposium on Energy Efficient Electronic Systems (E3S)

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