A. Shakouri, C. Labounty, P. Abraham, J. Piprek, J. Bowers
{"title":"基于inp的热离子冷却器","authors":"A. Shakouri, C. Labounty, P. Abraham, J. Piprek, J. Bowers","doi":"10.1109/ICIPRM.1999.773733","DOIUrl":null,"url":null,"abstract":"Thermoelectric coolers are important elements of many optoelectronic systems. Current commercial coolers are based on non-conventional semiconductors such as BiTe. In this paper we analyze the prospect of InP based material to fabricate coolers that can be integrated with optoelectronic components. Experimental results are shown where thermionic emission current in InGaAs/InGaAsP heterostructures is used to enhance the cooling power of conventional bulk material. About one degree cooling over 1 /spl mu/m thick barrier is observed (i.e. a cooling power of 200-300 W/cm/sup 2/). Calculations for InGaAs/InAlAs superlattices show that single stage cooling by as much as 20-30 degrees should be possible.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"InP-based thermionic coolers\",\"authors\":\"A. Shakouri, C. Labounty, P. Abraham, J. Piprek, J. Bowers\",\"doi\":\"10.1109/ICIPRM.1999.773733\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thermoelectric coolers are important elements of many optoelectronic systems. Current commercial coolers are based on non-conventional semiconductors such as BiTe. In this paper we analyze the prospect of InP based material to fabricate coolers that can be integrated with optoelectronic components. Experimental results are shown where thermionic emission current in InGaAs/InGaAsP heterostructures is used to enhance the cooling power of conventional bulk material. About one degree cooling over 1 /spl mu/m thick barrier is observed (i.e. a cooling power of 200-300 W/cm/sup 2/). Calculations for InGaAs/InAlAs superlattices show that single stage cooling by as much as 20-30 degrees should be possible.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773733\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773733","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thermoelectric coolers are important elements of many optoelectronic systems. Current commercial coolers are based on non-conventional semiconductors such as BiTe. In this paper we analyze the prospect of InP based material to fabricate coolers that can be integrated with optoelectronic components. Experimental results are shown where thermionic emission current in InGaAs/InGaAsP heterostructures is used to enhance the cooling power of conventional bulk material. About one degree cooling over 1 /spl mu/m thick barrier is observed (i.e. a cooling power of 200-300 W/cm/sup 2/). Calculations for InGaAs/InAlAs superlattices show that single stage cooling by as much as 20-30 degrees should be possible.
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