新兴技术的热趋势

G. Link, N. Vijaykrishnan
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引用次数: 76

摘要

在未来,芯片的峰值温度将是一个主要的设计约束。为了满足这一限制,必须在设计过程的早期阶段考虑温度。使用新开发的热分析工具HS3d,这项工作探索了设备随着技术变化的热分布。我们表明,随着技术规模的扩大,热点位置可以从具有最多开关活动的单元转移到具有最低阈值晶体管的单元。我们进一步注意到,泄漏主导技术的工艺变化会导致热点位置的显著变化,这表明来自热传感器的反馈将非常重要。最后,本研究考察了多层器件堆叠技术的热效应,发现由于功率密度的影响,层间的垂直温差远小于水平温差,因此,垂直布局优化对热点发展的影响远小于均匀功率分布
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Thermal trends in emerging technologies
In the future, the peak temperature of a chip will be a primary design constraint. In order to meet this constraint, temperature must be considered in the earliest phases of the design process. Using a newly developed thermal analysis tool, HS3d, this work explores the thermal profile of devices as technology varies. We show that as technology scales, the hotspot locations can shift from the units with the most switching activity to those with the most low-threshold transistors. We further note that process variations in leakage dominated technologies can result in significant variations in the hotspot locations, indicating that feedback from thermal sensors will be very important. Finally, this work examines the thermal effects of multi-layer device stacking technologies, and finds that the vertical temperature difference between layers is much less significant than the horizontal differences due to power density, and as such, vertical placement optimizations will have much smaller impact on hotspot development than a uniform power distribution
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