集成电路应用中新材料和器件架构的集成挑战

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) Pub Date : 2004-10-04 DOI:10.1109/ICICDT.2004.1309953

B. Nguyen, A. Thean, T. White, A. Vandooren, M. Sadaka, L. Mathew, A. Barr, S. Thomas, M. Zalava, Da Zhang, D. Eades, Zhonghai Shi, J. Schaeffer, D. Triyoso, S. Samavedam, V. Vartanian, T. Stephen, B. Goolsby, S. Zollner, Ran Liu, R. Noble, T. Nguyen, V. Dhandapani, B. Xie, X. Wang, J. Jiang, R. Rai, M. Sadd, M. Ramón, S. Kalpat, L. Prabhu, V. Kaushik, Y. Du, T. Dao, M. Mendicino, Marius K. Orlowski, P. Tobin, J. Mogab, S. Venkatesan

{"title":"集成电路应用中新材料和器件架构的集成挑战","authors":"B. Nguyen, A. Thean, T. White, A. Vandooren, M. Sadaka, L. Mathew, A. Barr, S. Thomas, M. Zalava, Da Zhang, D. Eades, Zhonghai Shi, J. Schaeffer, D. Triyoso, S. Samavedam, V. Vartanian, T. Stephen, B. Goolsby, S. Zollner, Ran Liu, R. Noble, T. Nguyen, V. Dhandapani, B. Xie, X. Wang, J. Jiang, R. Rai, M. Sadd, M. Ramón, S. Kalpat, L. Prabhu, V. Kaushik, Y. Du, T. Dao, M. Mendicino, Marius K. Orlowski, P. Tobin, J. Mogab, S. Venkatesan","doi":"10.1109/ICICDT.2004.1309953","DOIUrl":null,"url":null,"abstract":"In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.","PeriodicalId":158994,"journal":{"name":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","volume":"221 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Integration challenges of new materials and device architectures for IC applications\",\"authors\":\"B. Nguyen, A. Thean, T. White, A. Vandooren, M. Sadaka, L. Mathew, A. Barr, S. Thomas, M. Zalava, Da Zhang, D. Eades, Zhonghai Shi, J. Schaeffer, D. Triyoso, S. Samavedam, V. Vartanian, T. Stephen, B. Goolsby, S. Zollner, Ran Liu, R. Noble, T. Nguyen, V. Dhandapani, B. Xie, X. Wang, J. Jiang, R. Rai, M. Sadd, M. Ramón, S. Kalpat, L. Prabhu, V. Kaushik, Y. Du, T. Dao, M. Mendicino, Marius K. Orlowski, P. Tobin, J. Mogab, S. Venkatesan\",\"doi\":\"10.1109/ICICDT.2004.1309953\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.\",\"PeriodicalId\":158994,\"journal\":{\"name\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"volume\":\"221 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2004.1309953\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2004.1309953","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

在本文中，我们将详细介绍引入CMOS器件的新材料问题，并提出一些潜在的解决方案，以实现65纳米及以上节点的高性能和低功耗CMOS。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Integration challenges of new materials and device architectures for IC applications

In this paper, we will detail the issues with new materials being introduced into CMOS devices and present some potential solutions to enable high performance and low power CMOS for the 65nm node and beyond.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866)

自引率

0.00%

发文量