130 Nm SiGe BiCMOS工艺中12.5 GHz锁相环的设计分析

Kehan Zhu, V. Saxena, Xinyu Wu, S. Balagopal
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引用次数: 6

摘要

采用系统设计的方法对一类三阶电荷泵锁相环的回路稳定性和相位噪声进行了研究和分析。设计的锁相环输出频率为12.5 GHz,旨在为硅光子发射机原型提供时钟。电荷泵电流和环路滤波电阻可调,以覆盖工艺和温度变化。锁相环采用130纳米SiGe BiCMOS工艺设计。所研究的锁相环输出的有效值抖动约为5ps,参考时钟为97.7 MHz,有效值抖动为4.9 ps,信号发生器为0.05至12.5 GHz。在2.5 V电源下,锁相环的总功耗小于175 mW。
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Design Analysis of a 12.5 GHz PLL in 130 Nm SiGe BiCMOS Process
A systematic design method is applied to study and analyze the loop stability and phase noise of a type-II 3rd-order charge pump PLL. The designed PLL outputs at 12.5 GHz, which is intended to provide a clock for a silicon photonic transmitter prototype. The charge pump current and loop filter resistor are made tunable to cover process and temperature variations. The PLL is designed in a 130 nm SiGe BiCMOS process. The rms jitter of the studied PLL output is about 5 ps with a 97.7 MHz reference clock with 4.9 ps rms jitter from a 0.05 to 12.5 GHz signal generator. The total power consumption of the PLL is less than 175 mW from a 2.5 V power supply.
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