{"title":"非晶态和结晶铪基ReRAM随机电报噪声、耐久性和可靠性的比较","authors":"K. Beckmann, J. Holt, N. Cady, J. V. Van Nostrand","doi":"10.1109/IIRW.2015.7437079","DOIUrl":null,"url":null,"abstract":"Resistive random access memory (ReRAM) is a novel form of non-volatile memory expected to replace FLASH memory in the near future. To optimize the switching parameters of ReRAM we investigated fab-friendly HfOx based devices with an either amorphous or crystalline active layers. Our devices are fabricated with a copper bottom electrode, a 50 nm sub-stoichiometric hafnia layer, and a platinum top electrode. These devices operate according to the electrochemical metallization model. We compared endurance, reliability and random telegraph noise (RTN) with pulse-based cycling/readout. Initial endurance measurements show 4 million and 70 million consecutive cycles for the amorphous and crystalline hafnia, respectively. The transmission rate was shown to be slightly higher for the amorphous active layer with a confidence of 85%. Furthermore, it is shown that the relative difference in resistance during RTN is not dependent on the crystallinity, but increases with an increase in high resistive state. A high variety of noise patterns were observed, including transition rates from 1 s-1 up to 12000 s-1 and multi-state traps.","PeriodicalId":120239,"journal":{"name":"2015 IEEE International Integrated Reliability Workshop (IIRW)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2015-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comparison of random telegraph noise, endurance and reliability in amorphous and crystalline hafnia-based ReRAM\",\"authors\":\"K. Beckmann, J. Holt, N. Cady, J. V. Van Nostrand\",\"doi\":\"10.1109/IIRW.2015.7437079\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Resistive random access memory (ReRAM) is a novel form of non-volatile memory expected to replace FLASH memory in the near future. To optimize the switching parameters of ReRAM we investigated fab-friendly HfOx based devices with an either amorphous or crystalline active layers. Our devices are fabricated with a copper bottom electrode, a 50 nm sub-stoichiometric hafnia layer, and a platinum top electrode. These devices operate according to the electrochemical metallization model. We compared endurance, reliability and random telegraph noise (RTN) with pulse-based cycling/readout. Initial endurance measurements show 4 million and 70 million consecutive cycles for the amorphous and crystalline hafnia, respectively. The transmission rate was shown to be slightly higher for the amorphous active layer with a confidence of 85%. Furthermore, it is shown that the relative difference in resistance during RTN is not dependent on the crystallinity, but increases with an increase in high resistive state. A high variety of noise patterns were observed, including transition rates from 1 s-1 up to 12000 s-1 and multi-state traps.\",\"PeriodicalId\":120239,\"journal\":{\"name\":\"2015 IEEE International Integrated Reliability Workshop (IIRW)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Integrated Reliability Workshop (IIRW)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IIRW.2015.7437079\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2015.7437079","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of random telegraph noise, endurance and reliability in amorphous and crystalline hafnia-based ReRAM
Resistive random access memory (ReRAM) is a novel form of non-volatile memory expected to replace FLASH memory in the near future. To optimize the switching parameters of ReRAM we investigated fab-friendly HfOx based devices with an either amorphous or crystalline active layers. Our devices are fabricated with a copper bottom electrode, a 50 nm sub-stoichiometric hafnia layer, and a platinum top electrode. These devices operate according to the electrochemical metallization model. We compared endurance, reliability and random telegraph noise (RTN) with pulse-based cycling/readout. Initial endurance measurements show 4 million and 70 million consecutive cycles for the amorphous and crystalline hafnia, respectively. The transmission rate was shown to be slightly higher for the amorphous active layer with a confidence of 85%. Furthermore, it is shown that the relative difference in resistance during RTN is not dependent on the crystallinity, but increases with an increase in high resistive state. A high variety of noise patterns were observed, including transition rates from 1 s-1 up to 12000 s-1 and multi-state traps.