电场作用下GaAs-AlGaAs超晶格中的Van Hove型M1激子和Stark局域化激子

Quantum Wells for Optics and Optoelectronics Pub Date : 1900-01-01 DOI:10.1364/qwoe.1989.ma3

R. Yan, R. Simes, H. Ribot, L. Coldren, A. Gossard

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摘要

在室温下，首次在MBE生长的超晶格中观察到超晶格微带顶部Van Hove型M1奇点引起的场相关二维激子。通过场相关光电流测量，观察到有史以来最大的室温二维重空穴激子位移达到~30meV。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Van Hove Type M1 Exciton and Stark Localization Exciton in GaAs-AlGaAs Superlattices under an Electric Field

A field-dependent two-dimensional exciton due to a Van Hove type M1 singularity at the top of superlattice minibands has been observed in MBE grown superlattices for the first time at room temperature. The largest ever-reported room temperature two-dimensional heavy hole exciton shift up to ~30meV was observed by field-dependent photocurrent measurements.

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Quantum Wells for Optics and Optoelectronics

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