SOI技术中的1 ghz操作跨导放大器

J. Eggermont, D. Flandre, R. Gillon, J. Colinge
{"title":"SOI技术中的1 ghz操作跨导放大器","authors":"J. Eggermont, D. Flandre, R. Gillon, J. Colinge","doi":"10.1109/SOI.1995.526493","DOIUrl":null,"url":null,"abstract":"This work investigates the feasibility of realisation of SOI CMOS Operational Transconductance Amplifiers (OTA) operating up to 1 GHz. In contrast to a previously published microwave wideband amplifier driving low ohmic resistive line termination, OTAs for Switched-Capacitor (SC) applications need a high impedance and capacitive output node. In addition applications such as sigma-delta converters require fast OTAs. In order to reduce the settling time, the transfer function should also include a minimal amount of poles and zeros. Consequently in spite of its low voltage gain, this single-stage OTA could be of interest for high-frequency applications.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A 1-GHz operational transconductance amplifier in SOI technology\",\"authors\":\"J. Eggermont, D. Flandre, R. Gillon, J. Colinge\",\"doi\":\"10.1109/SOI.1995.526493\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This work investigates the feasibility of realisation of SOI CMOS Operational Transconductance Amplifiers (OTA) operating up to 1 GHz. In contrast to a previously published microwave wideband amplifier driving low ohmic resistive line termination, OTAs for Switched-Capacitor (SC) applications need a high impedance and capacitive output node. In addition applications such as sigma-delta converters require fast OTAs. In order to reduce the settling time, the transfer function should also include a minimal amount of poles and zeros. Consequently in spite of its low voltage gain, this single-stage OTA could be of interest for high-frequency applications.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526493\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526493","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8

摘要

本研究探讨了实现工作频率高达1ghz的SOI CMOS运算跨导放大器(OTA)的可行性。与之前发布的驱动低欧姆电阻线终端的微波宽带放大器相比,用于开关电容(SC)应用的ota需要高阻抗和容性输出节点。此外,诸如σ - δ转换器之类的应用需要快速ota。为了减少沉降时间,传递函数还应包含最小数量的极点和零点。因此,尽管其电压增益低,但这种单级OTA可能对高频应用感兴趣。
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A 1-GHz operational transconductance amplifier in SOI technology
This work investigates the feasibility of realisation of SOI CMOS Operational Transconductance Amplifiers (OTA) operating up to 1 GHz. In contrast to a previously published microwave wideband amplifier driving low ohmic resistive line termination, OTAs for Switched-Capacitor (SC) applications need a high impedance and capacitive output node. In addition applications such as sigma-delta converters require fast OTAs. In order to reduce the settling time, the transfer function should also include a minimal amount of poles and zeros. Consequently in spite of its low voltage gain, this single-stage OTA could be of interest for high-frequency applications.
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