CMOS集成电路中的非平稳单事件锁存

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI:10.1109/RADECS45761.2018.9328678

A. Chumakov, D. Bobrovsky, A. Pechenkin, D. V. Savchenkov, G. Sorokoumov

{"title":"CMOS集成电路中的非平稳单事件锁存","authors":"A. Chumakov, D. Bobrovsky, A. Pechenkin, D. V. Savchenkov, G. Sorokoumov","doi":"10.1109/RADECS45761.2018.9328678","DOIUrl":null,"url":null,"abstract":"The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.","PeriodicalId":248855,"journal":{"name":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Nonstationary Single Event Latch-up in CMOS ICs\",\"authors\":\"A. Chumakov, D. Bobrovsky, A. Pechenkin, D. V. Savchenkov, G. Sorokoumov\",\"doi\":\"10.1109/RADECS45761.2018.9328678\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.\",\"PeriodicalId\":248855,\"journal\":{\"name\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"volume\":\"29 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RADECS45761.2018.9328678\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RADECS45761.2018.9328678","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

本文介绍了CMOS集成电路中瞬态单事件锁存(SEL)的实验结果。轨跨坍塌是引起非平稳sel的主要原因。在SEL状态和IC动态模式下，施加在n-p-n-p结构上的电压的降低会引起额外的电流。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Nonstationary Single Event Latch-up in CMOS ICs

The paper presents experimental results about transient single event latch-up (SEL) in CMOS ICs. The rail span collapse is the main reason of nonstationary SELs. A decrease of the voltage applied to n-p-n-p structure can be caused an additional current both in SEL state and in IC dynamic mode.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

自引率

0.00%

发文量