基于质子损伤分析的空间应用发光二极管选择

A. Vakili, Daniel Bassetti, M. Bregoli, A. Lamagna, D. Mascali, V. Bellini, F. Ficorella, O. H. Ali, Mario Buffardo, Daniele Finocchi, S. Francola, C. Cianci
{"title":"基于质子损伤分析的空间应用发光二极管选择","authors":"A. Vakili, Daniel Bassetti, M. Bregoli, A. Lamagna, D. Mascali, V. Bellini, F. Ficorella, O. H. Ali, Mario Buffardo, Daniele Finocchi, S. Francola, C. Cianci","doi":"10.23919/empc53418.2021.9584957","DOIUrl":null,"url":null,"abstract":"The selection of the best Light Emitting Diode (LED) technologies for space application is a challenging issue, requiring a trade-off of several aspects starting from the intrinsic properties of the die. Starting from a previous evaluation of the LEDs for optocouplers by the team, the effects of proton-induced radiation damage on several types of more modern LEDs fabricated by different manufacturers and technologies are discussed in this paper. The test results have been validated by the supervising entity, according to their needs. The adopted methodology contemplated more than 150 devices, belonging to several technological options under comparison, irradiated unbiased. Electrical and electro-optical parameters were measured and analyzed by using dedicated advanced facilities and finally, the differences in output optical power emission and spectral emission and the degradation rate of the device families under comparison have been studied. Statistical analysis was performed, using a one-sided tolerance method for hardness assurance, on the LEDs’ optical power emission and spectral emission data in which the effects of different bias currents and particle fluences were investigated. Non-Ionizing Energy Loss model of the light sources was also applied in order to qualify the results. Finally, the comparative analysis clearly showed that one specific device family, i.e. R type, was the most efficient even after proton damage, with an outstanding performance if compared to all the others, and second best in relative terms, with N type was the one with the most reduced degradation dynamics. The comparative analysis allowed the device selection for the subsequent project phase, taking the obtained results into account.","PeriodicalId":348887,"journal":{"name":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","volume":"15 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Light Emitting Diodes selection for space applications based on the analysis of proton-induced damage\",\"authors\":\"A. Vakili, Daniel Bassetti, M. Bregoli, A. Lamagna, D. Mascali, V. Bellini, F. Ficorella, O. H. Ali, Mario Buffardo, Daniele Finocchi, S. Francola, C. Cianci\",\"doi\":\"10.23919/empc53418.2021.9584957\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The selection of the best Light Emitting Diode (LED) technologies for space application is a challenging issue, requiring a trade-off of several aspects starting from the intrinsic properties of the die. Starting from a previous evaluation of the LEDs for optocouplers by the team, the effects of proton-induced radiation damage on several types of more modern LEDs fabricated by different manufacturers and technologies are discussed in this paper. The test results have been validated by the supervising entity, according to their needs. The adopted methodology contemplated more than 150 devices, belonging to several technological options under comparison, irradiated unbiased. Electrical and electro-optical parameters were measured and analyzed by using dedicated advanced facilities and finally, the differences in output optical power emission and spectral emission and the degradation rate of the device families under comparison have been studied. Statistical analysis was performed, using a one-sided tolerance method for hardness assurance, on the LEDs’ optical power emission and spectral emission data in which the effects of different bias currents and particle fluences were investigated. Non-Ionizing Energy Loss model of the light sources was also applied in order to qualify the results. Finally, the comparative analysis clearly showed that one specific device family, i.e. R type, was the most efficient even after proton damage, with an outstanding performance if compared to all the others, and second best in relative terms, with N type was the one with the most reduced degradation dynamics. The comparative analysis allowed the device selection for the subsequent project phase, taking the obtained results into account.\",\"PeriodicalId\":348887,\"journal\":{\"name\":\"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)\",\"volume\":\"15 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-09-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/empc53418.2021.9584957\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 23rd European Microelectronics and Packaging Conference & Exhibition (EMPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/empc53418.2021.9584957","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

为空间应用选择最佳的发光二极管(LED)技术是一个具有挑战性的问题,需要从芯片的内在特性开始权衡几个方面。从该团队先前对用于光耦合器的led的评估开始,本文讨论了质子诱导辐射损伤对由不同制造商和技术制造的几种更现代的led的影响。测试结果已由监管单位根据其需要进行验证。所采用的方法考虑了150多个装置,属于正在比较的几种技术选择,无偏辐照。利用专用的先进设备对电学和电光参数进行了测量和分析,最后研究了所比较器件系列的输出光功率发射和光谱发射的差异以及降解率。采用单侧公差法对led光功率发射和光谱发射数据进行统计分析,研究了不同偏置电流和颗粒影响对led光功率发射和光谱发射数据的影响。为了验证结果,还采用了光源的非电离能量损失模型。最后,对比分析清楚地表明,一个特定的器件家族,即R型,即使在质子损伤后也是最有效的,与所有其他器件相比具有出色的性能,相对而言第二好,其中N型是退化动力学最小的器件。通过比较分析,可以将获得的结果考虑在内,为后续项目阶段选择设备。
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Light Emitting Diodes selection for space applications based on the analysis of proton-induced damage
The selection of the best Light Emitting Diode (LED) technologies for space application is a challenging issue, requiring a trade-off of several aspects starting from the intrinsic properties of the die. Starting from a previous evaluation of the LEDs for optocouplers by the team, the effects of proton-induced radiation damage on several types of more modern LEDs fabricated by different manufacturers and technologies are discussed in this paper. The test results have been validated by the supervising entity, according to their needs. The adopted methodology contemplated more than 150 devices, belonging to several technological options under comparison, irradiated unbiased. Electrical and electro-optical parameters were measured and analyzed by using dedicated advanced facilities and finally, the differences in output optical power emission and spectral emission and the degradation rate of the device families under comparison have been studied. Statistical analysis was performed, using a one-sided tolerance method for hardness assurance, on the LEDs’ optical power emission and spectral emission data in which the effects of different bias currents and particle fluences were investigated. Non-Ionizing Energy Loss model of the light sources was also applied in order to qualify the results. Finally, the comparative analysis clearly showed that one specific device family, i.e. R type, was the most efficient even after proton damage, with an outstanding performance if compared to all the others, and second best in relative terms, with N type was the one with the most reduced degradation dynamics. The comparative analysis allowed the device selection for the subsequent project phase, taking the obtained results into account.
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