低欧姆短路的锁相热成像失效分析

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898146

K. Wadhwa, R. Schlangen, J. Liao, T. Ton, H. Marks

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引用次数: 5

摘要

本文介绍了无损锁相热成像技术(LIT)及其在28nm图形处理器(GPU)低欧姆功率短路检测中的应用。LIT成功地在几秒钟内检测到芯片和封装内低至5欧姆的电源短路，从而实现准确有效的根本原因分析。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Failure analysis of low-ohmic shorts using lock-in thermography

This paper will present the non-destructive Lock-in thermography (LIT) technique and its application in detecting low-ohmic power shorts in 28 nm GPU (Graphics processing units). LIT was successful in detecting power shorts within die and package down to 5 Ohms within seconds, leading to accurate and efficient root cause analysis.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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