J. Segal, S. Bakarian, J. E. Colburn, Madan Kumar, Chang Hong, A. Shubat
{"title":"通过关键区域分析确定存储器阵列的冗余要求","authors":"J. Segal, S. Bakarian, J. E. Colburn, Madan Kumar, Chang Hong, A. Shubat","doi":"10.1109/MTDT.1999.782683","DOIUrl":null,"url":null,"abstract":"Using in-line defect data, critical area analysis of cell layout, and a rule-based algorithm to associate critical areas with electrical faults, we can determine the optimum redundancy configuration for any memory circuit. The technique predicts the yield for a range of redundancy configurations and finds the optimum number of redundant rows and columns for any memory design based on yield and die size considerations.","PeriodicalId":166999,"journal":{"name":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","volume":"50 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"Determining redundancy requirements for memory arrays with critical area analysis\",\"authors\":\"J. Segal, S. Bakarian, J. E. Colburn, Madan Kumar, Chang Hong, A. Shubat\",\"doi\":\"10.1109/MTDT.1999.782683\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using in-line defect data, critical area analysis of cell layout, and a rule-based algorithm to associate critical areas with electrical faults, we can determine the optimum redundancy configuration for any memory circuit. The technique predicts the yield for a range of redundancy configurations and finds the optimum number of redundant rows and columns for any memory design based on yield and die size considerations.\",\"PeriodicalId\":166999,\"journal\":{\"name\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"volume\":\"50 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-08-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MTDT.1999.782683\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 1999 IEEE International Workshop on Memory Technology, Design and Testing","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.1999.782683","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Determining redundancy requirements for memory arrays with critical area analysis
Using in-line defect data, critical area analysis of cell layout, and a rule-based algorithm to associate critical areas with electrical faults, we can determine the optimum redundancy configuration for any memory circuit. The technique predicts the yield for a range of redundancy configurations and finds the optimum number of redundant rows and columns for any memory design based on yield and die size considerations.