用于单光子雪崩二极管的厚锗硅结构外延生长的优化

2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) Pub Date : 2014-06-02 DOI:10.1109/ISTDM.2014.6874639

P. Allred, M. Myronov, S. Rhead, R. Warburton, G. Intermite, G. Buller, D. Leadley

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引用次数: 1

摘要

通过RP-CVD生长SPAD结构，发现SPAD结构具有优异的结晶度，TDD低;表面光滑，适合于装置的安装;为了最大限度地提高成绩，需要有清晰的兴奋剂档案。器件测量产生了任何Ge on Si SPAD记录的最高SPDE。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Optimization of epitaxial growth for thick Ge-on-Si structures used for single photon avalanche diode applications

SPAD structures have been grown by RP-CVD and shown to have: excellent crystallinity, with low TDD; a smooth surface, suitable for device incorporation; and sharp doping profiles required to maximize performance. Device measurements have produced the highest SPDE of any Ge on Si SPAD recorded.

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2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM)

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