电池监控IC高压引脚堆叠低压器件ESD防护设计

2015 28th IEEE International System-on-Chip Conference (SOCC) Pub Date : 2015-09-01 DOI:10.1109/SOCC.2015.7406987

Chia-Tsen Dai, M. Ker

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引用次数: 5

摘要

针对高压应用，提出了一种基于0.25 μ HV BCD工艺的片上ESD保护解决方案，该方案采用了具有堆叠结构的低压p型器件。在硅芯片上的实验结果验证了所提出的设计可以成功地保护电池监测IC的60v引脚免受超过8kv人体模式(HBM) ESD应力的影响。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESD protection design with stacked low-voltage devices for high-voltage pins of battery-monitoring IC

For high-voltage (HV) application, an on-chip ESD protection solution has been proposed in a 0.25-μm HV BCD process by using low-voltage (LV) p-type devices with the stacked configuration. Experimental results in silicon chip have verified that the proposed design can successfully protect the 60-V pins of a battery-monitoring IC against over 8-kV human-body-mode (HBM) ESD stress.

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2015 28th IEEE International System-on-Chip Conference (SOCC)

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