光诱导CI-AFP增强缺陷定位

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898201

N. Dayanand, A. Quah, C. Q. Chen, S. Neo, G. Ang, M. Gunawardana, Z. Mai, J. Lam

{"title":"光诱导CI-AFP增强缺陷定位","authors":"N. Dayanand, A. Quah, C. Q. Chen, S. Neo, G. Ang, M. Gunawardana, Z. Mai, J. Lam","doi":"10.1109/IPFA.2014.6898201","DOIUrl":null,"url":null,"abstract":"This paper describes the effectiveness of using light induced Current Imaging - Atomic Force Microscopy (CI-AFP) to localize defects that are not easily detected through conventional CI-AFP. Defect localization enhancement for both memory and logic failures has been demonstrated. For advanced technology nodes memory failures, current imaging from photovoltaic effects enhanced the detection of bridging between similar types of junctions. Light induced effects also helped to improve the distinction between gated and non-gated diode, as a result enhanced localization of gate to source/drain short.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Defect localization enhancement using light induced CI-AFP\",\"authors\":\"N. Dayanand, A. Quah, C. Q. Chen, S. Neo, G. Ang, M. Gunawardana, Z. Mai, J. Lam\",\"doi\":\"10.1109/IPFA.2014.6898201\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the effectiveness of using light induced Current Imaging - Atomic Force Microscopy (CI-AFP) to localize defects that are not easily detected through conventional CI-AFP. Defect localization enhancement for both memory and logic failures has been demonstrated. For advanced technology nodes memory failures, current imaging from photovoltaic effects enhanced the detection of bridging between similar types of junctions. Light induced effects also helped to improve the distinction between gated and non-gated diode, as a result enhanced localization of gate to source/drain short.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898201\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898201","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文介绍了利用光诱导电流成像-原子力显微镜(CI-AFP)定位传统CI-AFP难以检测到的缺陷的有效性。缺陷定位增强内存和逻辑故障已被证明。对于先进的技术节点记忆故障，来自光伏效应的电流成像增强了对相似类型节点之间桥接的检测。光诱导效应也有助于改善门控二极管和非门控二极管之间的区别，从而增强了门极到源极/漏极短路的定位。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Defect localization enhancement using light induced CI-AFP

This paper describes the effectiveness of using light induced Current Imaging - Atomic Force Microscopy (CI-AFP) to localize defects that are not easily detected through conventional CI-AFP. Defect localization enhancement for both memory and logic failures has been demonstrated. For advanced technology nodes memory failures, current imaging from photovoltaic effects enhanced the detection of bridging between similar types of junctions. Light induced effects also helped to improve the distinction between gated and non-gated diode, as a result enhanced localization of gate to source/drain short.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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