M. Horstmann, M. Hollfelder, K. Schimpf, R. Lehmann, M. Marso, P. Kordos
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Simple realization of a monolithic integrated photoreceiver for 10 Gbit/s using an InP/InGaAs heterostructure
A novel monolithic integrated photoreceiver for 10 Gbit/s long-wavelength optoelectronic transmission systems is presented. The photoreceiver consists of an MSM photodetector and a HEMT amplifier, prepared on an identical InGaAs/InP 2DEG layer structure. Design considerations, preparation procedure and optoelectronic properties of the photoreceiver under 1.3 /spl mu/m wavelength illumination are presented. The MSM photodetectors exhibit a 3 dB bandwidth of 16 GHz and the HEMT amplifiers have the cut-off frequency f/sub T/ of 45 GHz and f/sub max/, of 85 GHz. A bandwidth of 16 GHz can be achieved on optimized integrated photoreceivers.
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