硅埋氧化物界面电荷的表面光电压监测

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526456

K. Nauka, M. Cao, F. Assaderaghi

{"title":"硅埋氧化物界面电荷的表面光电压监测","authors":"K. Nauka, M. Cao, F. Assaderaghi","doi":"10.1109/SOI.1995.526456","DOIUrl":null,"url":null,"abstract":"Shows that SPV can be employed for fast and reliable monitoring ofthe Si-BOX interfacial charges. Simulation ofthe 0.25 pm CMOS-SOI transistor indicated degradation ofthe subthreshold leakage when the charge density exceeded 2 * 10/sup 12/ cm-2. Further MOSFET miniaturization could lower the critical value of Q/sub Si-Box/ to the levels presently observed in SIMOX SOI wafers.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Surface photovoltage monitoring of the Si-buried oxide interface charges\",\"authors\":\"K. Nauka, M. Cao, F. Assaderaghi\",\"doi\":\"10.1109/SOI.1995.526456\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Shows that SPV can be employed for fast and reliable monitoring ofthe Si-BOX interfacial charges. Simulation ofthe 0.25 pm CMOS-SOI transistor indicated degradation ofthe subthreshold leakage when the charge density exceeded 2 * 10/sup 12/ cm-2. Further MOSFET miniaturization could lower the critical value of Q/sub Si-Box/ to the levels presently observed in SIMOX SOI wafers.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526456\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

表明SPV可用于Si-BOX界面电荷的快速、可靠监测。对0.25 pm CMOS-SOI晶体管的仿真表明，当电荷密度超过2 * 10/sup 12/ cm-2时，亚阈值泄漏降低。进一步的MOSFET小型化可以将Q/sub Si-Box/的临界值降低到目前在SIMOX SOI晶圆中观察到的水平。

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Surface photovoltage monitoring of the Si-buried oxide interface charges

Shows that SPV can be employed for fast and reliable monitoring ofthe Si-BOX interfacial charges. Simulation ofthe 0.25 pm CMOS-SOI transistor indicated degradation ofthe subthreshold leakage when the charge density exceeded 2 * 10/sup 12/ cm-2. Further MOSFET miniaturization could lower the critical value of Q/sub Si-Box/ to the levels presently observed in SIMOX SOI wafers.

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1995 IEEE International SOI Conference Proceedings

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