H. Wehmann, A. Bartels, R. Klockenbrink, G.-P. Tang, E. Peiner, A. Schlachetzki, L. Malacký
{"title":"Si上ingaas - msm光电探测器的性能","authors":"H. Wehmann, A. Bartels, R. Klockenbrink, G.-P. Tang, E. Peiner, A. Schlachetzki, L. Malacký","doi":"10.1109/ICIPRM.1996.491973","DOIUrl":null,"url":null,"abstract":"In this contribution the fabrication of lattice-mismatched InGaAs metalsemiconductor-metal (MSM) photodetectors on [001]Si substrates by metal-organic vapour-phase epitaxy (MOVPE) is described. Their characteristics are compared to lattice-matched devices on InP as well as to literature data. We found that the main differences of the detector performances on Si and InP are not related with the above mentioned defects but with an increased background doping concentration associated with the incorporation of Si into the growing layers.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"6 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Properties of InGaAs-MSM-photodetectors on Si\",\"authors\":\"H. Wehmann, A. Bartels, R. Klockenbrink, G.-P. Tang, E. Peiner, A. Schlachetzki, L. Malacký\",\"doi\":\"10.1109/ICIPRM.1996.491973\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this contribution the fabrication of lattice-mismatched InGaAs metalsemiconductor-metal (MSM) photodetectors on [001]Si substrates by metal-organic vapour-phase epitaxy (MOVPE) is described. Their characteristics are compared to lattice-matched devices on InP as well as to literature data. We found that the main differences of the detector performances on Si and InP are not related with the above mentioned defects but with an increased background doping concentration associated with the incorporation of Si into the growing layers.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"6 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.491973\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491973","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this contribution the fabrication of lattice-mismatched InGaAs metalsemiconductor-metal (MSM) photodetectors on [001]Si substrates by metal-organic vapour-phase epitaxy (MOVPE) is described. Their characteristics are compared to lattice-matched devices on InP as well as to literature data. We found that the main differences of the detector performances on Si and InP are not related with the above mentioned defects but with an increased background doping concentration associated with the incorporation of Si into the growing layers.
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