{"title":"用于电路仿真的体接触SOI MOSFET模型","authors":"P. Su, S. Fung, F. Assaderaghi, C. Hu","doi":"10.1109/SOI.1999.819853","DOIUrl":null,"url":null,"abstract":"Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.","PeriodicalId":117832,"journal":{"name":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-10-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"A body-contact SOI MOSFET model for circuit simulation\",\"authors\":\"P. Su, S. Fung, F. Assaderaghi, C. Hu\",\"doi\":\"10.1109/SOI.1999.819853\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.\",\"PeriodicalId\":117832,\"journal\":{\"name\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-10-04\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1999.819853\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1999.819853","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
摘要
与部分耗尽(PD) SOI晶体管的本体接触提供了另一种程度的设计自由度。例如，DTMOS (Assaderaghi et al.， 1994)已经证明，身体接触可以用来提高功率/延迟性能。研究还表明，对于敏感电路，身体接触在消除浮体不稳定性方面起着重要作用(Chuang, 1998)。SOI电路设计肯定需要一个完整的SPICE模型来明确地解决身体接触的非理想性。在这里，我们提出了一个紧凑的体接触SOI MOSFET模型，该模型已在BSIMPD2.0中实现，用于电路仿真。
A body-contact SOI MOSFET model for circuit simulation
Making contact to the body of a partially depleted (PD) SOI transistor offers another degree of design freedom. For example, DTMOS (Assaderaghi et al., 1994) has demonstrated that the body-contact can be used to enhance the power/delay performance. It has also been shown that the body-contact plays an important role in eliminating the floating-body instability (Chuang, 1998) for sensitive circuits. A complete SPICE model that explicitly addresses the nonidealities of the body-contact is surely needed for SOI circuit design. Here, we present a compact body-contact SOI MOSFET model that has been implemented in BSIMPD2.0 for circuit simulation.
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