从FEOL堆积到集成电路芯片:AlCu衬垫上电微点蚀的完全相关

L. Sheng, Wei Pan, Zdenek Axman
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引用次数: 0

摘要

本文首次揭示了从FEOL堆积到集成电路芯片的铝铜衬垫上电微点蚀的完全相关性。一般来说,p井的存在是特定垫层腐蚀增强的主要因素。因此,微点蚀现象应该更广泛地研究,而不仅仅是单个凹坑上的电蚀。此外,电子限制的电化学动力学解释了焊盘面积依赖性。这为可靠性设计提供了一个极好的机会,其中小垫可以最大限度地减少微点蚀发生的机会。
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From FEOL Buildups to IC Chip: A Full Correlation of Galvanic Micro-Pitting on AlCu Pads
A full correlation of galvanic micro-pitting on AlCu pads has been for the first time revealed from FEOL buildups to IC chip. The presence of P-well was, in general, the primary factor of corrosion enhancement on specific pads. Therefore, the micro-pitting phenomenon should be more broadly examined well beyond the galvanic corrosion on individual pits. Furthermore, the electrons-limited electrochemical kinetics explain the pad-area dependence. This provides an excellent opportunity of design-for-reliability, where small pads can minimize the chance of micro-pitting occurrences.
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