电子结构与锗/硅量子点阵列密度、尺寸和形状的关系

Ming-Yi Lee, Yi-Chia Tsai, Yiming Li, S. Samukawa
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引用次数: 1

摘要

本文提出了一种计算有序Ge/ si纳米阵列微带结构和态密度的有效方法。在包络函数框架内,我们的方法超越了多维Kronig-Penney方法的理论近似,并通过模拟点间空间对微带结构的影响,为三维量子点设计提供了指导。
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Electronic structure dependence on the density, size and shape of Ge/Si quantum dots array
In this work, an efficient method is proposed to calculate the miniband structure and density of states for well-ordered Ge/Si-nanodisk array. Within the envelop-function framework, our approach surmounts theoretical approximations of the multi-dimensional Kronig-Penney method and provides a guideline for three-dimensional quantum dots design by simulating the effect of the interdot space on miniband structure.
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