{"title":"VGF生长InP块状晶体:位错密度与数值应力分析的比较研究","authors":"D. Zemke, H. Leister, G. Muller","doi":"10.1109/ICIPRM.1996.491930","DOIUrl":null,"url":null,"abstract":"The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2\" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"93 2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis\",\"authors\":\"D. Zemke, H. Leister, G. Muller\",\"doi\":\"10.1109/ICIPRM.1996.491930\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2\\\" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"93 2 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.491930\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.491930","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of InP bulk crystals by VGF: a comparative study of dislocation density and numerical stress analysis
The potential of the VGF process is analysed by using a flat bottom crucible for the growth of InP crystals with 2" diameter. Results of numerical simulations are used to design a set-up which can be run in a LEC facility. The EPD /spl ap/3/spl middot/10/sup 3/ cm/sup -2/ of the grown crystals is in accordance with calculated results based on an analysis of the thermal stress occurring during growth.
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