{"title":"低剂量SIMOX晶圆中吸积层的形成","authors":"J. Jabłoński, M. Saito, M. Imai, S. Nakashima","doi":"10.1109/SOI.1995.526447","DOIUrl":null,"url":null,"abstract":"The mechanism of SFT generation in low-dose SIMOX wafers was analyzed. It was found that generation of these microdefects inside the top Si layer is strongly suppressed in comparison with those in the BOX. Moreover, both processes occur at different stages of high temperature annealing and thus can be controlled by the proper optimization of annealing conditions. As a result, it seems possible to produce SIMOX wafers with a defect-free top Si film and a gettering layer located beneath the BOX.","PeriodicalId":149490,"journal":{"name":"1995 IEEE International SOI Conference Proceedings","volume":"68 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Gettering layer formation in low-dose SIMOX wafers\",\"authors\":\"J. Jabłoński, M. Saito, M. Imai, S. Nakashima\",\"doi\":\"10.1109/SOI.1995.526447\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The mechanism of SFT generation in low-dose SIMOX wafers was analyzed. It was found that generation of these microdefects inside the top Si layer is strongly suppressed in comparison with those in the BOX. Moreover, both processes occur at different stages of high temperature annealing and thus can be controlled by the proper optimization of annealing conditions. As a result, it seems possible to produce SIMOX wafers with a defect-free top Si film and a gettering layer located beneath the BOX.\",\"PeriodicalId\":149490,\"journal\":{\"name\":\"1995 IEEE International SOI Conference Proceedings\",\"volume\":\"68 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-10-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 IEEE International SOI Conference Proceedings\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1995.526447\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 IEEE International SOI Conference Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1995.526447","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Gettering layer formation in low-dose SIMOX wafers
The mechanism of SFT generation in low-dose SIMOX wafers was analyzed. It was found that generation of these microdefects inside the top Si layer is strongly suppressed in comparison with those in the BOX. Moreover, both processes occur at different stages of high temperature annealing and thus can be controlled by the proper optimization of annealing conditions. As a result, it seems possible to produce SIMOX wafers with a defect-free top Si film and a gettering layer located beneath the BOX.
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