射频CMOS功率放大器的线性化

2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT) Pub Date : 2015-08-01 DOI:10.1109/RFIT.2015.7377918

G. Jeong, Bonhoon Koo, T. Joo, Songcheol Hong

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引用次数: 4

摘要

本文介绍了两种用于射频CMOS功率放大器的线性化技术。一种是利用级联结构中共源(CS)和共门(CG)放大器自适应控制偏置的线性化技术，另一种是功率电池线性化技术，如CS放大器的大信号多门晶体管(LS-MGTR)和CG放大器的自适应功率电池(APC)。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Linearization of RF CMOS power amplifiers

This paper presents two kinds of linearization techniques for RF CMOS Power Amplifiers (PAs). One is the linearization technique using adaptively controlled biases of Common Source (CS) and Common Gate (CG) amplifier in a cascode structure The ethers are the power-cell linearization techniques such as large signal multi-gated transistor (LS-MGTR) of a CS amplifier and adaptive power cell (APC) of CG amplifier.

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2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)

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