{"title":"利用平面扫描电容显微镜结合纳米探针和TCAD建模分析MOSFET植入物失效","authors":"Hun-Seong Choi, Yongwoon Han, I. Chung","doi":"10.1109/IPFA.2014.6898128","DOIUrl":null,"url":null,"abstract":"This paper presents MOSFET implant failure analysis using plane view scanning capacitance microscopy (PVSCM) at silicon substrate level. Failing transistors are characterized by nano-probing (NP) at contact level. The cause of failure was deduced from the combination of PVSCM, IV characteristics from NP measurement, and TEM cross-section analysis. Technology computer aided design (TCAD) simulation was implemented for failure modeling and SCM data verification. Failure analysis case studies of samples manufactured by 65 nm and 45 nm process are presented.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"125 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"MOSFET implant failure analysis using plane-view scanning capacitance microscopy coupled with nano-probing and TCAD modeling\",\"authors\":\"Hun-Seong Choi, Yongwoon Han, I. Chung\",\"doi\":\"10.1109/IPFA.2014.6898128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents MOSFET implant failure analysis using plane view scanning capacitance microscopy (PVSCM) at silicon substrate level. Failing transistors are characterized by nano-probing (NP) at contact level. The cause of failure was deduced from the combination of PVSCM, IV characteristics from NP measurement, and TEM cross-section analysis. Technology computer aided design (TCAD) simulation was implemented for failure modeling and SCM data verification. Failure analysis case studies of samples manufactured by 65 nm and 45 nm process are presented.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"125 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
MOSFET implant failure analysis using plane-view scanning capacitance microscopy coupled with nano-probing and TCAD modeling
This paper presents MOSFET implant failure analysis using plane view scanning capacitance microscopy (PVSCM) at silicon substrate level. Failing transistors are characterized by nano-probing (NP) at contact level. The cause of failure was deduced from the combination of PVSCM, IV characteristics from NP measurement, and TEM cross-section analysis. Technology computer aided design (TCAD) simulation was implemented for failure modeling and SCM data verification. Failure analysis case studies of samples manufactured by 65 nm and 45 nm process are presented.
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