{"title":"等离子体刻蚀预处理用于高纵横比三维NAND的TEM片层制备","authors":"Yu-Chi Chen, Bing-Chang Li, Pei-Ling Hsu, Tsung-Yi Lin, I-An Chen, Chun-Hung Lin, Hsin-Cheng Hsu, C. Yeh, N. Lian, Ta-Hone Yang, Kuang-Chao Chen","doi":"10.31399/asm.cp.istfa2021p0141","DOIUrl":null,"url":null,"abstract":"\n The 3D NAND sample with high aspect ratio (HAR) etched by plasma was investigated. By controlling the plasma etching parameters, a relatively high etch rate could be obtained. Moreover, with appropriately controlling the etch time, we could etch top region of HAR sample with expected number of layers, which could help us to completely analyze the high aspect ratio sample with TEM cross-section analysis, especially for the middle region of 3D NAND.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Plasma Etching Pre-treatment for a TEM Lamella Preparation of 3D NAND with High Aspect Ratio\",\"authors\":\"Yu-Chi Chen, Bing-Chang Li, Pei-Ling Hsu, Tsung-Yi Lin, I-An Chen, Chun-Hung Lin, Hsin-Cheng Hsu, C. Yeh, N. Lian, Ta-Hone Yang, Kuang-Chao Chen\",\"doi\":\"10.31399/asm.cp.istfa2021p0141\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n The 3D NAND sample with high aspect ratio (HAR) etched by plasma was investigated. By controlling the plasma etching parameters, a relatively high etch rate could be obtained. Moreover, with appropriately controlling the etch time, we could etch top region of HAR sample with expected number of layers, which could help us to completely analyze the high aspect ratio sample with TEM cross-section analysis, especially for the middle region of 3D NAND.\",\"PeriodicalId\":188323,\"journal\":{\"name\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2021p0141\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2021p0141","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Plasma Etching Pre-treatment for a TEM Lamella Preparation of 3D NAND with High Aspect Ratio
The 3D NAND sample with high aspect ratio (HAR) etched by plasma was investigated. By controlling the plasma etching parameters, a relatively high etch rate could be obtained. Moreover, with appropriately controlling the etch time, we could etch top region of HAR sample with expected number of layers, which could help us to completely analyze the high aspect ratio sample with TEM cross-section analysis, especially for the middle region of 3D NAND.
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