D. Keiper, U. Eriksson, R. Westphalen, G. Landgren
{"title":"在N/sub - 2/环境下使用CBr/sub - 4/、TBA和TBP的InP基HBT新MOVPE工艺","authors":"D. Keiper, U. Eriksson, R. Westphalen, G. Landgren","doi":"10.1109/ICIPRM.1999.773755","DOIUrl":null,"url":null,"abstract":"Carbon doped InGaAs/InP was grown utilising TBA, CBr/sub 4/ in N/sub 2/. The n-doping uniformity for InGaAs shows a standard deviation of less than 1%, utilising SiH/sub 4/. Maximum carbon doping levels of 10/sup 20/ cm/sup -3/ were achieved, comparable to MBE techniques. HBTs with 6.5/spl times/10/sup 18/ cm/sup 3/ doped base layers, grown at 550/spl deg/C, show current amplifications of 130.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"New MOVPE process for InP based HBT's using CBr/sub 4/, TBA and TBP in N/sub 2/ ambient\",\"authors\":\"D. Keiper, U. Eriksson, R. Westphalen, G. Landgren\",\"doi\":\"10.1109/ICIPRM.1999.773755\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Carbon doped InGaAs/InP was grown utilising TBA, CBr/sub 4/ in N/sub 2/. The n-doping uniformity for InGaAs shows a standard deviation of less than 1%, utilising SiH/sub 4/. Maximum carbon doping levels of 10/sup 20/ cm/sup -3/ were achieved, comparable to MBE techniques. HBTs with 6.5/spl times/10/sup 18/ cm/sup 3/ doped base layers, grown at 550/spl deg/C, show current amplifications of 130.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"14 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773755\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773755","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
New MOVPE process for InP based HBT's using CBr/sub 4/, TBA and TBP in N/sub 2/ ambient
Carbon doped InGaAs/InP was grown utilising TBA, CBr/sub 4/ in N/sub 2/. The n-doping uniformity for InGaAs shows a standard deviation of less than 1%, utilising SiH/sub 4/. Maximum carbon doping levels of 10/sup 20/ cm/sup -3/ were achieved, comparable to MBE techniques. HBTs with 6.5/spl times/10/sup 18/ cm/sup 3/ doped base layers, grown at 550/spl deg/C, show current amplifications of 130.
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