一种新的基于表面电位的A - igzo TFTs在RFID应用中的紧凑模型

Z. Zong, Ling Li, Jin Jang, Zhigang Li, Nianduan Lu, Liwei Shang, Z. Ji, Ming Liu
{"title":"一种新的基于表面电位的A - igzo TFTs在RFID应用中的紧凑模型","authors":"Z. Zong, Ling Li, Jin Jang, Zhigang Li, Nianduan Lu, Liwei Shang, Z. Ji, Ming Liu","doi":"10.1109/IEDM.2014.7047176","DOIUrl":null,"url":null,"abstract":"For the first time, we present a surface potential-based compact model for a-IGZO TFTs based on multiple trapping-release theory and benchmark our work against device measurements. This model does not require time-consuming calculation. Meanwhile, we have developed the automatic parameter extraction program, which can extract the parameters rapidly and accurately. Moreover, the compact model is coded in Verilog-A, and implemented in a vendor CAD environment. This model provides physics-based consistent description of DC and AC device characteristics and enables accurate circuit-level performance prediction and RFID circuit design of a-IGZO TFTs.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"15","resultStr":"{\"title\":\"A new surface potential-based compact model for a-IGZO TFTs in RFID applications\",\"authors\":\"Z. Zong, Ling Li, Jin Jang, Zhigang Li, Nianduan Lu, Liwei Shang, Z. Ji, Ming Liu\",\"doi\":\"10.1109/IEDM.2014.7047176\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"For the first time, we present a surface potential-based compact model for a-IGZO TFTs based on multiple trapping-release theory and benchmark our work against device measurements. This model does not require time-consuming calculation. Meanwhile, we have developed the automatic parameter extraction program, which can extract the parameters rapidly and accurately. Moreover, the compact model is coded in Verilog-A, and implemented in a vendor CAD environment. This model provides physics-based consistent description of DC and AC device characteristics and enables accurate circuit-level performance prediction and RFID circuit design of a-IGZO TFTs.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"33 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"15\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7047176\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047176","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 15

摘要

我们首次提出了基于多次捕获-释放理论的基于表面电位的a- igzo TFTs紧凑模型,并根据器件测量对我们的工作进行了基准测试。这个模型不需要耗时的计算。同时,我们开发了自动参数提取程序,可以快速准确地提取出参数。此外,紧凑的模型在Verilog-A中编码,并在供应商CAD环境中实现。该模型提供了基于物理的直流和交流器件特性的一致描述,并实现了精确的电路级性能预测和a-IGZO TFTs的RFID电路设计。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
A new surface potential-based compact model for a-IGZO TFTs in RFID applications
For the first time, we present a surface potential-based compact model for a-IGZO TFTs based on multiple trapping-release theory and benchmark our work against device measurements. This model does not require time-consuming calculation. Meanwhile, we have developed the automatic parameter extraction program, which can extract the parameters rapidly and accurately. Moreover, the compact model is coded in Verilog-A, and implemented in a vendor CAD environment. This model provides physics-based consistent description of DC and AC device characteristics and enables accurate circuit-level performance prediction and RFID circuit design of a-IGZO TFTs.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction 55-µA GexTe1−x/Sb2Te3 superlattice topological-switching random access memory (TRAM) and study of atomic arrangement in Ge-Te and Sb-Te structures GaN-based Gate Injection Transistors for power switching applications Comprehensive analysis of deformation of interfacial micro-nano structure by applied force in triboelectric energy harvester Novel intrinsic and extrinsic engineering for high-performance high-density self-aligned InGaAs MOSFETs: Precise channel thickness control and sub-40-nm metal contacts
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1