K. Lee, H. Hashimoto, M. Onishi, S. Konno, Y. Sato, C. Nagai, J. Bea, M. Murugesan, T. Fukushima, T. Tanaka, M. Koyanagi
{"title":"采用重新配置的多晶片上三维集成技术制造的高可靠性三维堆叠多核处理器系统模块","authors":"K. Lee, H. Hashimoto, M. Onishi, S. Konno, Y. Sato, C. Nagai, J. Bea, M. Murugesan, T. Fukushima, T. Tanaka, M. Koyanagi","doi":"10.1109/IEDM.2014.7047128","DOIUrl":null,"url":null,"abstract":"A highly dependable 3-D stacked multicore processor module composed of 4-layer stacked 3-D multicore processor chip and 2-layer stacked 3-D cache memory chip is implemented using reconfigured multichip-on-wafer 3-D integration and backside TSV technologies for the first time. Tier boundary scan, self-repair circuits, and BIST circuits in the 4-layer stacked 3-D multicore processor chip and the basic read/write functions of memory circuits in the 2-layer stacked 3-D cache memory chip are successfully evaluated. High-density TSVs and micro-joining characteristics in the 3-D stacked chip were evaluated by a non-destructive method using high resolution X-ray CT scanning tool.","PeriodicalId":309325,"journal":{"name":"2014 IEEE International Electron Devices Meeting","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Highly dependable 3-D stacked multicore processor system module fabricated using reconfigured multichip-on-wafer 3-D integration technology\",\"authors\":\"K. Lee, H. Hashimoto, M. Onishi, S. Konno, Y. Sato, C. Nagai, J. Bea, M. Murugesan, T. Fukushima, T. Tanaka, M. Koyanagi\",\"doi\":\"10.1109/IEDM.2014.7047128\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A highly dependable 3-D stacked multicore processor module composed of 4-layer stacked 3-D multicore processor chip and 2-layer stacked 3-D cache memory chip is implemented using reconfigured multichip-on-wafer 3-D integration and backside TSV technologies for the first time. Tier boundary scan, self-repair circuits, and BIST circuits in the 4-layer stacked 3-D multicore processor chip and the basic read/write functions of memory circuits in the 2-layer stacked 3-D cache memory chip are successfully evaluated. High-density TSVs and micro-joining characteristics in the 3-D stacked chip were evaluated by a non-destructive method using high resolution X-ray CT scanning tool.\",\"PeriodicalId\":309325,\"journal\":{\"name\":\"2014 IEEE International Electron Devices Meeting\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 IEEE International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2014.7047128\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 IEEE International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2014.7047128","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Highly dependable 3-D stacked multicore processor system module fabricated using reconfigured multichip-on-wafer 3-D integration technology
A highly dependable 3-D stacked multicore processor module composed of 4-layer stacked 3-D multicore processor chip and 2-layer stacked 3-D cache memory chip is implemented using reconfigured multichip-on-wafer 3-D integration and backside TSV technologies for the first time. Tier boundary scan, self-repair circuits, and BIST circuits in the 4-layer stacked 3-D multicore processor chip and the basic read/write functions of memory circuits in the 2-layer stacked 3-D cache memory chip are successfully evaluated. High-density TSVs and micro-joining characteristics in the 3-D stacked chip were evaluated by a non-destructive method using high resolution X-ray CT scanning tool.