稳定离散k·p模型的变分公式

W. Frensley
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引用次数: 1

摘要

半导体纳米结构的k·p模型中长期存在的伪态问题已经被证明是使用梯度的中心差分近似的产物,并且已经表明稳定模型可以基于低阶单侧差分构建。本文演示了如何将所得的体带结构模型应用于异质结构而不引入波函数行为的异常。这是通过构造一个变分泛函来完成的,其中显式插入所需的波函数连续性和边界值,然后从该泛函导出离散哈密顿量。
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Variational formulation of stable discrete k·p models
The longstanding problem of spurious states in k·p models of semiconductor nanostructures has been shown to be an artifact of the use of the centereddifference approximation to the gradient, and it has been shown that stable models may be constructed on the basis of lower-order one-sided differences. The present paper demonstrates how the resulting bulk bandstructure models may be applied to heterostructures without introducing anomalies in the wavefunction behavior. This is done by constructing a variational functional in which the desired wavefunction continuity and boundary values are explicitly inserted, and then deriving the discrete Hamiltonian from that functional.
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