rtd磁通门中的噪声效应

IEEE Sensors, 2005. Pub Date : 2005-10-31 DOI:10.1109/ICSENS.2005.1597854

B. Andd, S. Baelio, V. Sacco, A. Bulsara, V. In

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引用次数: 10

摘要

停留时差(RTD)磁通门的模型和广泛的理论发现已经在以前的论文中提出。一个非常简单的传感器结构，可忽略的板载功率需求和固有的数字形式的读出信号是该策略的主要特点。在本文中，我们旨在研究不确定性的主要来源，包括噪声，以及限制其对设备影响的可能策略;最后给出了噪声表征的结果

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Noise effects in RTD-fluxgate

Models and an extensive set of theoretical findings of residence times difference (RTD) fluxgate have been already presented in previous papers. A very simple sensor structure, negligible onboard power requirements and the intrinsic digital form of the readout signal are the main features of the proposed strategy. In this paper we aim to investigate main sources of uncertainty, including noise, and possible strategies to limit their effects on the devices; finally results on noise characterization are presented

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IEEE Sensors, 2005.

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